2SD Transistor Datasheet pdf, 2SD Equivalent. Parameters and Characteristics. 2SD NPN SILICON TRANSISTOR. UNISONIC TECHNOLOGIES CO., LTD. 2 of 3 QW-RG. ▫ ABSOLUTE MAXIMUM. Power Transistor (80V, 1A). 2SD / 2SD / 2SDS / 2SD ○ Features. 1) High VCEO, VCEO=80V. 2) High IC, IC=1A (DC). 3) Good hFE linearity.
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The AT- is housed in More information.
2SD Datasheet(PDF) – Shenzhen Jin Yu Semiconductor Co., Ltd.
Product overview Type number More information. Howvr, ROHM dos not warrants that such information is rror-fr, and ROHM shall hav no rsponsibility for any damags arising from any inaccuracy or misprint of such information.
Small Signal Switching Transistor. NPN general-purpose transistors in small plastic packages. Bfor you us our Products, plas contact our sals rprsntativ and vrify th latst spcifications: ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations.
For us of our Products in applications rquiring a high dgr of rliability as xmplifid blowplas contact and consult with a ROHM rprsntativ: To make this website work, we log user data and share it with processors. It is intended for telecommunications More information. Collector Current I Fig. NPN medium power transistor. Features Low Saturation Voltage Excellent.
They are designed for high speed. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. All leads are isolated.
ROHM shall hav no rsponsibility for any damags or losss rsulting non-complianc with any applicabl laws or rgulations. Quick reference data Rev. Collctor Currnt I Fig. It’s a community-based project which helps to repair anything. The AT- is housed in.
Characteristic Symbol Rating Unit. I C  Fig. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures.
Please v isit our website for pricing and availability at www. Description High voltage fast-switching NPN power transistor Datasheet production data Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications More information.
Th Products ar intndd for us in gnral lctronic quipmnt i. ROHM has usd rasonabl car to nsur th accuracy of th information containd in this documnt. Collctor Currnt 0 Fig. It is intended for telecommunications. General description PNP general-purpose transistors.
NPN EPITAXIAL SILICON TRANSISTOR
NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with More information. The peripheral conditions must be taken into account when designing circuits for mass production.
General description NPN general-purpose transistors. Packaging type SST3 Marking. Features High DC More information. Thrfor, in ordr to prvnt prsonal injury or fir arising from failur, plas tak safty masurs such as complying with th drating charactristics, implmnting rdundant and fir prvntion dsigns, and utilizing backups and fail-saf procdurs.
ROHM dos not grant you, xplicitly or implicitly, any licns to us or xrcis intllctual proprty or othr rights hld by ROHM or any othr partis. Emitter-Base Voltage Collector output capacitance vs. Exampls of application circuits, circuit constants and any othr information containd hrin ar providd only to illustrat th standard usag and oprations of th Products.
The product s described herein should not be used for any other application. Start display at page:. Designed for use in general purpose power amplifier and switching applications. A 2 Excellent DC current gain characteristics. Designed for general-purpose amplifier and low speed switching applications.
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